Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

SIHJ8N60E-T1-GE3

Part NumberSIHJ8N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V POWERPAK SO-8L

DatasheetSIHJ8N60E-T1-GE3

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 8A (Tc) 89W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIHJ8N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHJ8N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHJ8N60E-T1-GE3.
We are offering SIHJ8N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHJ8N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHJ8N60E-T1-GE3
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	520mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	44nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	754pF @ 100V
FET Feature	-
Power Dissipation (Max)	89W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIHJ8N60E-T1-GE3 - Related Products

	BSC027N04LSGATMA1	Infineon Technologies, N-Channel 40V 24A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™	View
	SI4464DY-T1-GE3	Vishay Siliconix, N-Channel 200V 1.7A (Ta) 1.5W (Ta) Surface Mount 8-SO, TrenchFET®	View
	IPA90R500C3XKSA1	Infineon Technologies, N-Channel 900V 11A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™	View
	FDD13AN06A0	ON Semiconductor, N-Channel 60V 9.9A (Ta), 50A (Tc) 115W (Tc) Surface Mount DPAK, PowerTrench®	View
	IXFP4N100Q	IXYS, N-Channel 1000V 4A (Tc) 150W (Tc) Through Hole TO-220AB, HiPerFET™	View
	IPDD60R080G7XTMA1	Infineon Technologies, N-Channel 600V 29A (Tc) 174W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7	View
	SSM6K513NU,LF	Toshiba Semiconductor and Storage, N-Channel 30V 15A (Ta) 1.25W (Ta) Surface Mount 6-UDFNB (2x2), U-MOSIX-H	View
	DMN10H170SFG-13	Diodes Incorporated, N-Channel 100V 2.9A (Ta), 8.5A (Tc) 940mW (Ta) Surface Mount PowerDI3333-8,	View
	2N6660	Microchip Technology, N-Channel 60V 410mA (Ta) 6.25W (Tc) Through Hole TO-39,	View
	RD3P200SNFRATL	Rohm Semiconductor, N-Channel 100V 20A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101	View
	IRFP244PBF	Vishay Siliconix, N-Channel 250V 15A (Tc) 150W (Tc) Through Hole TO-247-3,	View
	NVMFS5C468NT1G	ON Semiconductor, N-Channel 40V 12A (Ta), 35A (Tc) 3.5W (Ta), 28W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL), Automotive, AEC-Q101	View

SIHJ8N60E-T1-GE3 - Tags

SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 PDF SIHJ8N60E-T1-GE3 datasheet SIHJ8N60E-T1-GE3 specification SIHJ8N60E-T1-GE3 image SIHJ8N60E-T1-GE3 India Renesas Electronics India SIHJ8N60E-T1-GE3 buy SIHJ8N60E-T1-GE3 SIHJ8N60E-T1-GE3 price SIHJ8N60E-T1-GE3 distributor SIHJ8N60E-T1-GE3 supplier SIHJ8N60E-T1-GE3 wholesales