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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_430A
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
NTA4001NT1G
ON Semiconductor, N-Channel 20V 238mA (Tj) 300mW (Tj) Surface Mount SC-75, SOT-416,
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IRFHS8342TRPBF
Infineon Technologies, N-Channel 30V 8.8A (Ta), 19A (Tc) 2.1W (Ta) Surface Mount PG-TSDSON-6, HEXFET®
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STP13NM60ND
STMicroelectronics, N-Channel 600V 11A (Tc) 109W (Tc) Through Hole TO-220, FDmesh™ II
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STW5NK100Z
STMicroelectronics, N-Channel 1000V 3.5A (Tc) 125W (Tc) Through Hole TO-247-3, SuperMESH3™
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SQJA64EP-T1_GE3
Vishay Siliconix, N-Channel 60V 15A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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RDR005N25TL
Rohm Semiconductor, N-Channel 250V 500mA (Ta) 540mW (Ta) Surface Mount TSMT3,
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R6009KNX
Rohm Semiconductor, N-Channel 600V 9A (Tc) 48W (Tc) Through Hole TO-220FM,
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BSC123N08NS3GATMA1
Infineon Technologies, N-Channel 80V 11A (Ta), 55A (Tc) 2.5W (Ta), 66W (Tc) Surface Mount PG-TDSON-8-1, OptiMOS™
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TSM1NB60CH C5G
Taiwan Semiconductor Corporation, N-Channel 600V 1A (Tc) 39W (Tc) Through Hole TO-251 (IPAK),
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BUK966R5-60E,118
Nexperia USA Inc., N-Channel 60V 75A (Tc) 182W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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RK7002BT116
Rohm Semiconductor, N-Channel 60V 250mA (Ta) 200mW (Ta) Surface Mount SST3,
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PSMN3R8-100BS,118
Nexperia USA Inc., N-Channel 100V 120A (Tc) 306W (Tc) Surface Mount D2PAK,
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