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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_430A
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.7Ohm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 490pF @ 25V
FET Feature -
Power Dissipation (Max) 110W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BSS119NH6327XTSA1
Infineon Technologies, N-Channel 100V 190mA (Ta) 500mW (Ta) Surface Mount SOT-23-3, OptiMOS™
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IRF1010ESTRLPBF
Infineon Technologies, N-Channel 60V 84A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®
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LND150N3-G-P003
Microchip Technology, N-Channel 500V 30mA (Tj) 740mW (Ta) Through Hole TO-92-3,
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FDP3682
ON Semiconductor, N-Channel 100V 6A (Ta), 32A (Tc) 95W (Tc) Through Hole TO-220-3, PowerTrench®
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STW7N90K5
STMicroelectronics, N-Channel 900V 7A (Tc) 110W (Tc) Through Hole TO-247-3, MDmesh™ K5
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FQP34N20
ON Semiconductor, N-Channel 200V 31A (Tc) 180W (Tc) Through Hole TO-220-3, QFET®
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STD3N95K5AG
STMicroelectronics, N-Channel 950V 2A (Tc) 45W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, MDmesh™ K5
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SI4128DY-T1-GE3
Vishay Siliconix, N-Channel 30V 10.9A (Ta) 2.4W (Ta), 5W (Tc) Surface Mount 8-SO, TrenchFET®
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IXTP3N120
IXYS, N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220AB, HiPerFET™
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BSS138P,215
Nexperia USA Inc., N-Channel 60V 360mA (Ta) 350mW (Ta), 1.14W (Tc) Surface Mount TO-236AB, Automotive, AEC-Q101, TrenchMOS™
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RSH065N03TB1
Rohm Semiconductor, N-Channel 30V 6.5A (Ta) 2W (Ta) Surface Mount 8-SOP,
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2N7002-HF
Comchip Technology, N-Channel 60V 250mA (Ta) 350mW (Ta) Surface Mount SOT-23,
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