FDD850N10L
FDD850N10L
Part Number FDD850N10L Description MOSFET N-CH 100V 15.7A DPAK-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 15.7A (Tc) 50W (Tc) Surface Mount DPAK
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FDD850N10L - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet FDD850N10L Standard Package 1 Manufacturer ON Semiconductor Series PowerTrench® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 15.7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 75mOhm @ 12A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 28.9nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1465pF @ 25V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package DPAK Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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