Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHG33N60E
Standard Package	500
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	99mOhm @ 16.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	150nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	3508pF @ 100V
FET Feature	-
Power Dissipation (Max)	278W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

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CPH6442-TL-W	ON Semiconductor, N-Channel 60V 6A (Ta) 1.6W (Ta) Surface Mount 6-CPH,	View
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SIHG25N60EFL-GE3	Vishay Siliconix, N-Channel 600V 25A (Tc) 250W (Tc) Through Hole TO-247AC,	View
IRL640STRLPBF	Vishay Siliconix, N-Channel 200V 17A (Tc) 3.1W (Ta), 125W (Tc) Surface Mount D2PAK,	View
FCD9N60NTM	ON Semiconductor, N-Channel 600V 9A (Tc) 92.6W (Tc) Surface Mount D-Pak, SupreMOS™	View
STB28N60DM2	STMicroelectronics, N-Channel 600V 21A (Tc) 170W (Tc) Surface Mount D2PAK, MDmesh™ DM2	View
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SIHG33N60E-GE3

Part NumberSIHG33N60E-GE3