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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_214
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 250V
Current - Continuous Drain (Id) @ 25°C 2.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 1.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SQP120N10-3M8_GE3
Vishay Siliconix, N-Channel 100V 120A (Tc) 250W (Tc) Through Hole TO-220AB,
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FQPF85N06
ON Semiconductor, N-Channel 60V 53A (Tc) 62W (Tc) Through Hole TO-220F, QFET®
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IRFBC20PBF
Vishay Siliconix, N-Channel 600V 2.2A (Tc) 50W (Tc) Through Hole TO-220AB,
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TSM180N03CS RLG
Taiwan Semiconductor Corporation, N-Channel 30V 9A (Tc) 2.5W (Tc) Surface Mount 8-SOP,
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2SK3745LS-1E
ON Semiconductor, N-Channel 1500V 2A (Ta) 2W (Ta), 35W (Tc) Through Hole TO-220F-3FS,
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SIR404DP-T1-GE3
Vishay Siliconix, N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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STP34N65M5
STMicroelectronics, N-Channel 650V 28A (Tc) 190W (Tc) Through Hole TO-220, MDmesh™ V
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IPP60R060P7XKSA1
Infineon Technologies, N-Channel 600V 48A (Tc) 164W (Tc) Through Hole PG-TO220-3, CoolMOS™ P7
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BSC076N06NS3GATMA1
Infineon Technologies, N-Channel 60V 50A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount PG-TDSON-8-5, OptiMOS™
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IRF8010STRLPBF
Infineon Technologies, N-Channel 100V 80A (Tc) 260W (Tc) Surface Mount D2PAK, HEXFET®
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SQJQ100E-T1_GE3
Vishay Siliconix, N-Channel 40V 200A (Tc) 150W (Tc) Surface Mount PowerPAK® 8 x 8, Automotive, AEC-Q101, TrenchFET®
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SIHP8N50D-GE3
Vishay Siliconix, N-Channel 500V 8.7A (Tc) 156W (Tc) Through Hole TO-220AB,
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