BSR202NL6327HTSA1
BSR202NL6327HTSA1
Part Number BSR202NL6327HTSA1 Description MOSFET N-CH 20V 3.8A SC-59 Package / Case TO-236-3, SC-59, SOT-23-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 3.8A (Ta) 500mW (Ta) Surface Mount PG-SC-59
To learn about the specification of BSR202NL6327HTSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSR202NL6327HTSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSR202NL6327HTSA1.
We are offering BSR202NL6327HTSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSR202NL6327HTSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSR202N Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 3.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 21mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id 1.2V @ 30µA Gate Charge (Qg) (Max) @ Vgs 8.8nC @ 4.5V Vgs (Max) ±12V Input Capacitance (Ciss) (Max) @ Vds 1147pF @ 10V FET Feature - Power Dissipation (Max) 500mW (Ta) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-SC-59 Package / Case TO-236-3, SC-59, SOT-23-3
BSR202NL6327HTSA1 - Related ProductsMore >>
STD16NF06T4 STMicroelectronics, N-Channel 60V 16A (Tc) 40W (Tc) Surface Mount DPAK, STripFET™ II
View
IPA50R190CEXKSA2 Infineon Technologies, N-Channel 500V 18.5A (Tc) 32W (Tc) Through Hole PG-TO220 Full Pack, CoolMOS™ CE
View
SI4122DY-T1-GE3 Vishay Siliconix, N-Channel 40V 27.2A (Tc) 3W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
View
ZXMN6A08E6TA Diodes Incorporated, N-Channel 60V 2.8A (Ta) 1.1W (Ta) Surface Mount SOT-26,
View
STW69N65M5-4 STMicroelectronics, N-Channel 650V 58A (Tc) 330W (Tc) Through Hole TO-247-4L, MDmesh™ V
View
IRFS3206TRRPBF Infineon Technologies, N-Channel 60V 120A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®
View
FDPF39N20 ON Semiconductor, N-Channel 200V 39A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™
View
NVD6495NLT4G-VF01 ON Semiconductor, N-Channel 100V 25A (Tc) 83W (Tc) Surface Mount DPAK,
View
SSM3K72CFS,LF Toshiba Semiconductor and Storage, N-Channel 60V 170mA (Ta) 150mW (Ta) Surface Mount SSM, U-MOSVII-H
View
ZXMN3A01E6TA Diodes Incorporated, N-Channel 30V 2.4A (Ta) 1.1W (Ta) Surface Mount SOT-23-6,
View
SI7898DP-T1-E3 Vishay Siliconix, N-Channel 150V 3A (Ta) 1.9W (Ta) Surface Mount PowerPAK® SO-8, TrenchFET®
View
SI2316DS-T1-E3 Vishay Siliconix, N-Channel 30V 2.9A (Ta) 700mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
BSR202NL6327HTSA1 - Tags
English
