SIHG40N60E-GE3
SIHG40N60E-GE3
Part Number SIHG40N60E-GE3
Description MOSFET N-CH 600V 40A TO247AC
Package / Case TO-247-3
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 600V 40A (Tc) 329W (Tc) Through Hole TO-247AC
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SIHG40N60E-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SIHG40N60E
Standard Package 500
Manufacturer Vishay Siliconix
Series E
Packaging Tube
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600V
Current - Continuous Drain (Id) @ 25°C 40A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 197nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4436pF @ 100V
FET Feature -
Power Dissipation (Max) 329W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Supplier Device Package TO-247AC
Package / Case TO-247-3
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