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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IRFR8314TRPBF
Infineon Technologies, N-Channel 30V 90A (Tc) 125W (Tc) Surface Mount D-PAK (TO-252AA), HEXFET®
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ZXMN2F34FHTA
Diodes Incorporated, N-Channel 20V 3.4A (Ta) 950mW (Ta) Surface Mount SOT-23-3,
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STU7NM60N
STMicroelectronics, N-Channel 600V 5A (Tc) 45W (Tc) Through Hole I-PAK, MDmesh™ II
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SI4490DY-T1-GE3
Vishay Siliconix, N-Channel 200V 2.85A (Ta) 1.56W (Ta) Surface Mount 8-SO, TrenchFET®
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IXFP4N60P3
IXYS, N-Channel 600V 4A (Tc) 114W (Tc) Through Hole TO-220AB, HiPerFET™, Polar3™
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VN0104N3-G
Microchip Technology, N-Channel 40V 350mA (Tj) 1W (Tc) Through Hole TO-92-3,
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SI4864DY-T1-GE3
Vishay Siliconix, N-Channel 20V 17A (Ta) 1.6W (Ta) Surface Mount 8-SO, TrenchFET®
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FDMS86181
ON Semiconductor, N-Channel 100V 44A (Ta), 124A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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BSP89H6327XTSA1
Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®
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BUK768R3-60E,118
Nexperia USA Inc., N-Channel 60V 75A (Tc) 137W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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IPB60R099CPATMA1
Infineon Technologies, N-Channel 600V 31A (Tc) 255W (Tc) Surface Mount PG-TO263-3-2, CoolMOS™
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CSD17310Q5A
Texas Instruments, N-Channel 30V 21A (Ta), 100A (Tc) 3.1W (Ta) Surface Mount 8-VSONP (5x6), NexFET™
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