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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_210
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 2.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1.5Ohm @ 1.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STB42N60M2-EP
STMicroelectronics, N-Channel 600V 34A (Tc) 250W (Tc) Surface Mount D2PAK, MDmesh™ M2-EP
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IRFP460LCPBF
Vishay Siliconix, N-Channel 500V 20A (Tc) 280W (Tc) Through Hole TO-247-3,
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RS1E240BNTB
Rohm Semiconductor, N-Channel 30V 24A (Ta) 3W (Ta), 30W (Tc) Surface Mount 8-HSOP,
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NVMFS5834NLT1G
ON Semiconductor, N-Channel 40V 14A (Ta), 75A (Tc) 3.6W (Ta), 107W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),
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IXFQ60N50P3
IXYS, N-Channel 500V 60A (Tc) 1040W (Tc) Through Hole TO-3P, HiPerFET™, Polar3™
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BSS670S2LH6327XTSA1
Infineon Technologies, N-Channel 55V 540mA (Ta) 360mW (Ta) Surface Mount SOT-23-3, OptiMOS™
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RS1E130GNTB
Rohm Semiconductor, N-Channel 30V 13A (Ta) 3W (Ta), 22.2W (Tc) Surface Mount 8-HSOP,
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IRLMS1902TRPBF
Infineon Technologies, N-Channel 20V 3.2A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
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RS3E095BNGZETB
Rohm Semiconductor, N-Channel 30V 9.5A (Ta) 2W (Tc) Surface Mount 8-SOP,
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STP7N80K5
STMicroelectronics, N-Channel 800V 6A (Tc) 110W (Tc) Through Hole TO-220, SuperMESH5™
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RD3P100SNFRATL
Rohm Semiconductor, N-Channel 100V 10A (Ta) 20W (Tc) Surface Mount TO-252, Automotive, AEC-Q101
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STU13N60M2
STMicroelectronics, N-Channel 600V 11A (Tc) 110W (Tc) Through Hole IPAK (TO-251), MDmesh™ II Plus
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