IPD22N08S2L50ATMA1
IPD22N08S2L50ATMA1
Part Number IPD22N08S2L50ATMA1 Description MOSFET N-CH 75V 27A TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 75V 27A (Tc) 75W (Tc) Surface Mount PG-TO252-3
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IPD22N08S2L50ATMA1 - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD22N08S2L-50 Standard Package 1 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75V Current - Continuous Drain (Id) @ 25°C 27A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 50mOhm @ 50A, 10V Vgs(th) (Max) @ Id 2V @ 31µA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 630pF @ 25V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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