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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N04S4-05
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, OptiMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 86A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 5.2mOhm @ 86A, 10V
Vgs(th) (Max) @ Id 4V @ 30µA
Gate Charge (Qg) (Max) @ Vgs 37nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2960pF @ 25V
FET Feature -
Power Dissipation (Max) 65W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TO252-3-313
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI1012R-T1-GE3
Vishay Siliconix, N-Channel 20V 500mA (Ta) 150mW (Ta) Surface Mount SC-75A, TrenchFET®
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TK040N65Z,S1F
Toshiba Semiconductor and Storage, N-Channel 650V 57A (Ta) 360W (Tc) Through Hole TO-247,
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STP310N10F7
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII
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IRLR110TRPBF
Vishay Siliconix, N-Channel 100V 4.3A (Tc) 2.5W (Ta), 25W (Tc) Surface Mount D-Pak,
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STWA12N120K5
STMicroelectronics, N-Channel 1200V 12A (Tc) 250W (Tc) Through Hole TO-247 Long Leads, MDmesh™ K5
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PSMN6R5-30MLDX
Nexperia USA Inc., N-Channel 30V 65A (Tc) 51W (Tc) Surface Mount LFPAK33,
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IRLI640GPBF
Vishay Siliconix, N-Channel 200V 9.9A (Tc) 40W (Tc) Through Hole TO-220-3,
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RCX120N25
Rohm Semiconductor, N-Channel 250V 12A (Ta) 2.23W (Ta), 40W (Tc) Through Hole TO-220FM,
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IXTA80N075L2
IXYS, N-Channel 75V 80A (Tc) 357W (Tc) Surface Mount TO-263AA, Linear L2™
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FDMS86252
ON Semiconductor, N-Channel 150V 4.6A (Ta), 16A (Tc) 2.5W (Ta), 69W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®
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FDMA7632
ON Semiconductor, N-Channel 30V 9A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2), PowerTrench®
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RD3P050SNTL1
Rohm Semiconductor, N-Channel 100V 5A (Ta) 15W (Tc) Surface Mount TO-252,
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