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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_120
Standard Package 1
Manufacturer Vishay Siliconix
Series -
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100V
Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 270mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
BUK9222-55A,118
Nexperia USA Inc., N-Channel 55V 48A (Tc) 103W (Tc) Surface Mount DPAK, Automotive, AEC-Q101, TrenchMOS™
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SI7430DP-T1-GE3
Vishay Siliconix, N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8,
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IPD60R400CEAUMA1
Infineon Technologies, N-Channel 600V 14.7A (Tc) 112W (Tc) Surface Mount PG-TO252, CoolMOS™ CE
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DMNH10H028SPSQ-13
Diodes Incorporated, N-Channel 100V 40A (Tc) 1.6W (Ta) Surface Mount PowerDI5060-8,
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PSMN3R0-30YL,115
Nexperia USA Inc., N-Channel 30V 100A (Tc) 81W (Tc) Surface Mount LFPAK56, Power-SO8,
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ZXMN2F30FHTA
Diodes Incorporated, N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3,
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SIHB100N60E-GE3
Vishay Siliconix, N-Channel 600V 30A (Tc) 208W (Tc) Surface Mount D²PAK (TO-263),
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IPA50R140CPXKSA1
Infineon Technologies, N-Channel 500V 23A (Tc) 34W (Tc) Through Hole PG-TO220-FP, CoolMOS™
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IXTQ36N50P
IXYS, N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-3P, PolarHV™
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CSD19535KTT
Texas Instruments, N-Channel 100V 200A (Ta) 300W (Tc) Surface Mount DDPAK/TO-263-3, NexFET™
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SIR846ADP-T1-GE3
Vishay Siliconix, N-Channel 100V 60A (Tc) 5.4W (Ta), 83W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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STU3LN80K5
STMicroelectronics, N-Channel 800V 2A (Tc) 45W (Tc) Through Hole IPAK (TO-251), MDmesh™ K5
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