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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK626R2-40C
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 6.2mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 67nC @ 10V
Vgs (Max) ±16V
Input Capacitance (Ciss) (Max) @ Vds 3720pF @ 25V
FET Feature -
Power Dissipation (Max) 128W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DPAK
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
STD15NF10T4
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STMicroelectronics, N-Channel 950V 8A (Tc) 130W (Tc) Through Hole TO-220, SuperMESH5™
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SI4840BDY-T1-E3
Vishay Siliconix, N-Channel 40V 19A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®
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