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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STB45N50DM2AG
Standard Package 1000
Manufacturer STMicroelectronics
Series Automotive, AEC-Q101, MDmesh™ DM2
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500V
Current - Continuous Drain (Id) @ 25°C 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 84mOhm @ 17.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 57nC @ 10V
Vgs (Max) ±25V
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 100V
FET Feature -
Power Dissipation (Max) 250W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SUD23N06-31-T4-GE3
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SQD50N05-11L_GE3
Vishay Siliconix, N-Channel 50V 50A (Tc) 75W (Tc) Surface Mount TO-252AA, TrenchFET®
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SIS782DN-T1-GE3
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STW9N150
STMicroelectronics, N-Channel 1500V 8A (Tc) 320W (Tc) Through Hole TO-247-3, PowerMESH™
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STH185N10F3-6
STMicroelectronics, N-Channel 100V 180A (Tc) 315W (Tc) Surface Mount H2PAK-6, Automotive, AEC-Q101, STripFET™ F3
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IPN50R950CEATMA1
Infineon Technologies, N-Channel 500V 6.6A (Tc) 5W (Tc) Surface Mount PG-SOT223, CoolMOS™ CE
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TPH3R003PL,LQ
Toshiba Semiconductor and Storage, N-Channel 30V 88A (Tc) 90W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
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SIJ186DP-T1-GE3
Vishay Siliconix, N-Channel 60V 23A (Ta), 79.4A (Tc) 5W (Ta), 57W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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SIR606BDP-T1-RE3
Vishay Siliconix, N-Channel 100V 10.9A (Ta), 38.7A (Tc) 5W (Ta), 62.5W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
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PSMN2R4-30YLDX
Nexperia USA Inc., N-Channel 30V 100A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8,
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SQJA60EP-T1_GE3
Vishay Siliconix, N-Channel 60V 30A (Tc) 45W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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IRFS4310TRLPBF
Infineon Technologies, N-Channel 100V 130A (Tc) 300W (Tc) Surface Mount D2PAK, HEXFET®
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