IRFHM830TRPBF
IRFHM830TRPBF
Part Number IRFHM830TRPBF Description MOSFET N-CH 30V 21A PQFN Package / Case 8-VQFN Exposed PadUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 21A (Ta), 40A (Tc) 2.7W (Ta), 37W (Tc) Surface Mount PQFN (3x3)
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IRFHM830TRPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFHM830PbF Standard Package 1 Manufacturer Infineon Technologies Series HEXFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 21A (Ta), 40A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 20A, 10V Vgs(th) (Max) @ Id 2.35V @ 50µA Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2155pF @ 25V FET Feature - Power Dissipation (Max) 2.7W (Ta), 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PQFN (3x3) Package / Case 8-VQFN Exposed Pad
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