IRFI4510GPBF
IRFI4510GPBF
Part Number IRFI4510GPBF Description MOSFET N CH 100V 35A TO220 Package / Case TO-220-3 Full PackUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 35A (Tc) 42W (Tc) Through Hole TO-220AB Full-Pak
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IRFI4510GPBF - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFI4510GPBF Standard Package 2000 Manufacturer Infineon Technologies Series HEXFET® Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 13.5mOhm @ 21A, 10V Vgs(th) (Max) @ Id 4V @ 100µA Gate Charge (Qg) (Max) @ Vgs 81nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 2998pF @ 50V FET Feature - Power Dissipation (Max) 42W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-220AB Full-Pak Package / Case TO-220-3 Full Pack
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