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IRFB4110GPBF

IRFB4110GPBF

Part NumberIRFB4110GPBF

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 100V 120A TO220AB

DatasheetIRFB4110GPbF

Package / CaseTO-220-3

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Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB

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IRFB4110GPBF - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IRFB4110GPbF
Standard Package	1000
Manufacturer	Infineon Technologies
Series	HEXFET®
Packaging	Tube
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	4.5mOhm @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	210nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9620pF @ 50V
FET Feature	-
Power Dissipation (Max)	370W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220AB
Package / Case	TO-220-3

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