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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFB31N20DPbF, IRFS(L)31N20DPbF
Standard Package 1
Manufacturer Infineon Technologies
Series HEXFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 31A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 82mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107nC @ 10V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 2370pF @ 25V
FET Feature -
Power Dissipation (Max) 3.1W (Ta), 200W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RJU002N06T106
Rohm Semiconductor, N-Channel 60V 200mA (Ta) 200mW (Ta) Surface Mount UMT3,
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STP80N10F7
STMicroelectronics, N-Channel 100V 80A (Tc) 110W (Tc) Through Hole TO-220, DeepGATE™, STripFET™ VII
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IXTQ130N10T
IXYS, N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-3P, TrenchMV™
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CSD19533Q5AT
Texas Instruments, N-Channel 100V 100A (Ta) 3.2W (Ta), 96W (Tc) Surface Mount 8-VSONP (5x6), NexFET™
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FDBL9406-F085
ON Semiconductor, N-Channel 40V 240A (Tc) 300W (Tj) Surface Mount 8-HPSOF, Automotive, AEC-Q101, PowerTrench®
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SQP120N06-6M7_GE3
Vishay Siliconix, Through Hole TO-220AB,
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DMN3026LVT-7
Diodes Incorporated, N-Channel 30V 6.6A (Ta) 1.2W (Ta) Surface Mount TSOT-26,
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IRFS23N20DTRLP
Infineon Technologies, N-Channel 200V 24A (Tc) 3.8W (Ta), 170W (Tc) Surface Mount D2PAK, HEXFET®
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DMNH6021SK3Q-13
Diodes Incorporated, N-Channel 60V 50A (Tc) 2.1W (Ta) Surface Mount TO-252-4L, Automotive, AEC-Q101
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FDD5612
ON Semiconductor, N-Channel 60V 5.4A (Ta) 3.8W (Ta), 42W (Tc) Surface Mount TO-252-3, PowerTrench®
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BSL606SNH6327XTSA1
Infineon Technologies, N-Channel 60V 4.5A (Ta) 2W (Ta) Surface Mount PG-TSOP-6-6, Automotive, AEC-Q101, OptiMOS™
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SIHF22N60E-GE3
Vishay Siliconix, N-Channel 600V 21A (Tc) 35W (Tc) Through Hole TO-220 Full Pack,
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