IPP60R170CFD7XKSA1
IPP60R170CFD7XKSA1
Part Number IPP60R170CFD7XKSA1 Description MOSFET N-CH TO220-3 Package / Case TO-220-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 14A (Tc) 75W (Tc) Through Hole PG-TO220-3
To learn about the specification of IPP60R170CFD7XKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP60R170CFD7XKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP60R170CFD7XKSA1.
We are offering IPP60R170CFD7XKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPP60R170CFD7XKSA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPP60R170CFD7 Standard Package 500 Manufacturer Infineon Technologies Series CoolMOS™ CFD7 Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 14A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 170mOhm @ 6A, 10V Vgs(th) (Max) @ Id 4.5V @ 300µA Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1199pF @ 400V FET Feature - Power Dissipation (Max) 75W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole Supplier Device Package PG-TO220-3 Package / Case TO-220-3
IPP60R170CFD7XKSA1 - Related ProductsMore >>
IXTH30N60P IXYS, N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-247 (IXTH), PolarHV™
View
BUK9635-55A,118 Nexperia USA Inc., N-Channel 55V 34A (Tc) 85W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
View
SSM3K116TU,LF Toshiba Semiconductor and Storage, N-Channel 30V 2.2A (Ta) 500mW (Ta) Surface Mount UFM, U-MOSIII
View
TPN2010FNH,L1Q Toshiba Semiconductor and Storage, N-Channel 250V 5.6A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
STP9NK60Z STMicroelectronics, N-Channel 600V 7A (Tc) 125W (Tc) Through Hole TO-220AB, SuperMESH™
View
FQB50N06TM ON Semiconductor, N-Channel 60V 50A (Tc) 3.75W (Ta), 120W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
View
SIHP120N60E-GE3 Vishay Siliconix, N-Channel 600V 25A (Tc) 179W (Tc) Through Hole TO-220AB,
View
IPP051N15N5AKSA1 Infineon Technologies, N-Channel 150V 120A 500mW (Tc) Through Hole PG-TO220-3, OptiMOS™ 5
View
SIRA66DP-T1-GE3 Vishay Siliconix, N-Channel 30V 50A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8,
View
PSMN012-100YS,115 Nexperia USA Inc., N-Channel 100V 60A (Tc) 130W (Tc) Surface Mount LFPAK56, Power-SO8,
View
STL13N60M2 STMicroelectronics, N-Channel 600V 7A (Tc) 55W (Tc) Surface Mount PowerFlat™ (5x6) HV, MDmesh™ II Plus
View
SIRC18DP-T1-GE3 Vishay Siliconix, N-Channel 30V 60A (Tc) 54.3W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV
View
IPP60R170CFD7XKSA1 - Tags
English
