SI4436DY-T1-E3
SI4436DY-T1-E3
Part Number SI4436DY-T1-E3
Description MOSFET N-CH 60V 8A 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width)
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 8A (Tc) 2.5W (Ta), 5W (Tc) Surface Mount 8-SO
To learn about the specification of SI4436DY-T1-E3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI4436DY-T1-E3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI4436DY-T1-E3.
We are offering SI4436DY-T1-E3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI4436DY-T1-E3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet Si4436DY
Standard Package 1
Manufacturer Vishay Siliconix
Series TrenchFET®
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 36mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1100pF @ 30V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 8-SO
Package / Case 8-SOIC (0.154", 3.90mm Width)
SI4436DY-T1-E3 - Related ProductsMore >>
TN2524N8-G
Microchip Technology, N-Channel 240V 360mA (Tj) 1.6W (Tc) Surface Mount TO-243AA (SOT-89),
View
TPN1R603PL,L1Q
Toshiba Semiconductor and Storage, N-Channel 30V 80A (Tc) 104W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSIX-H
View
RTQ035N03TR
Rohm Semiconductor, N-Channel 30V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95),
View
IPW60R125C6FKSA1
Infineon Technologies, N-Channel 600V 30A (Tc) 219W (Tc) Through Hole PG-TO247-3, CoolMOS™
View
TPN5900CNH,L1Q
Toshiba Semiconductor and Storage, N-Channel 150V 9A (Ta) 700mW (Ta), 39W (Tc) Surface Mount 8-TSON Advance (3.3x3.3), U-MOSVIII-H
View
PSMN018-80YS,115
Nexperia USA Inc., N-Channel 80V 45A (Tc) 89W (Tc) Surface Mount LFPAK56, Power-SO8,
View
BUZ11-NR4941
ON Semiconductor, N-Channel 50V 30A (Tc) 75W (Tc) Through Hole TO-220-3,
View
IRFS4229TRLPBF
Infineon Technologies, N-Channel 250V 45A (Tc) 330W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®
View
IRFP4229PBF
Infineon Technologies, N-Channel 250V 44A (Tc) 310W (Tc) Through Hole TO-247AC, HEXFET®
View
STP80NF03L-04
STMicroelectronics, N-Channel 30V 80A (Tc) 300W (Tc) Through Hole TO-220AB, STripFET™ II
View
SIRA66DP-T1-GE3
Vishay Siliconix, N-Channel 30V 50A (Tc) 62.5W (Tc) Surface Mount PowerPAK® SO-8,
View
CDM4-650 TR13
Central Semiconductor Corp, N-Channel 650V 4A (Ta) 620mW (Ta), 77W (Tc) Surface Mount DPAK,
View
SI4436DY-T1-E3 - Tags