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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRFR,IRFU,SiHFR,SiHFU_220
Standard Package 2000
Manufacturer Vishay Siliconix
Series -
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 4.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 800mOhm @ 2.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 14nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 260pF @ 25V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D-Pak
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
SI2302A-TP
Micro Commercial Co, N-Channel 20V 3A 1.25W Surface Mount SOT-23,
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IXFN100N50P
IXYS, N-Channel 500V 90A (Tc) 1040W (Tc) Chassis Mount SOT-227B, PolarHV™
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SI1012-TP
Micro Commercial Co, N-Channel 20V 500mA (Tc) 150mW (Tc) Surface Mount SOT-523,
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SQJA02EP-T1_GE3
Vishay Siliconix, N-Channel 60V 60A (Tc) 68W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
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FDP39N20
ON Semiconductor, N-Channel 200V 39A (Tc) 251W (Tc) Through Hole TO-220-3, UniFET™
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BSP320SH6327XTSA1
Infineon Technologies, N-Channel 60V 2.9A (Tj) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS™
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BSH105,215
Nexperia USA Inc., N-Channel 20V 1.05A (Ta) 417mW (Ta) Surface Mount TO-236AB,
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IPA083N10N5XKSA1
Infineon Technologies, N-Channel 100V 44A (Tc) 36W (Tc) Through Hole PG-TO220-FP, OptiMOS™
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FDMC7692S
ON Semiconductor, N-Channel 30V 12.5A (Ta), 18A (Tc) 2.3W (Ta), 27W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®, SyncFET™
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CSD17551Q3A
Texas Instruments, N-Channel 30V 12A (Tc) 2.6W (Ta) Surface Mount 8-SON (3.3x3.3), NexFET™
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TSM020N04LCR RLG
Taiwan Semiconductor Corporation, N-Channel 40V 170A (Tc) 104W (Tc) Surface Mount 8-PDFN (5x6),
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FQB9N50CTM
ON Semiconductor, N-Channel 500V 9A (Tc) 135W (Tc) Surface Mount D²PAK (TO-263AB), QFET®
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