Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IRF100P218XKMA1

IRF100P218XKMA1

IRF100P218XKMA1

Part NumberIRF100P218XKMA1

ManufacturerInfineon Technologies

DescriptionTRENCH_MOSFETS

DatasheetRF100P218

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 556W (Tc) Through Hole TO-247AC

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IRF100P218XKMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RF100P218
Standard Package	400
Manufacturer	Infineon Technologies
Series	StrongIRFET™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	1.28mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs	555nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	25000pF @ 50V
FET Feature	-
Power Dissipation (Max)	556W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247AC
Package / Case	TO-247-3

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IRF100P218XKMA1 - Tags

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