BSC012N06NSATMA1
BSC012N06NSATMA1
Part Number BSC012N06NSATMA1
Description TRENCH 40<-<100V
Package / Case 8-PowerTDFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 60V 100A 214W (Tc) Surface Mount PG-TSON-8-3
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BSC012N06NSATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSC012N06NS
Standard Package 5000
Manufacturer Infineon Technologies
Series OptiMOS™
Packaging Tape & Reel (TR)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) @ 25°C 100A
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Rds On (Max) @ Id, Vgs 1.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 3.3V @ 147µA
Gate Charge (Qg) (Max) @ Vgs 143nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 11000pF @ 30V
FET Feature -
Power Dissipation (Max) 214W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-TSON-8-3
Package / Case 8-PowerTDFN
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