IPT65R195G7XTMA1
IPT65R195G7XTMA1
Part Number IPT65R195G7XTMA1
Description HIGH POWER_NEW
Package / Case 8-PowerSFN
Unit Price Request a Quote
Lead Time To be Confirmed
Detailed Description N-Channel 650V 14A (Tc) 97W (Tc) Surface Mount PG-HSOF-8-2
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IPT65R195G7XTMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPT65R195G7
Standard Package 1
Manufacturer Infineon Technologies
Series CoolMOS™ C7
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 195mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 4V @ 240µA
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 996pF @ 400V
FET Feature -
Power Dissipation (Max) 97W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package PG-HSOF-8-2
Package / Case 8-PowerSFN
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