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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPD90N04S4L-04 Standard Package 1 Manufacturer Infineon Technologies Series Automotive, AEC-Q101, OptiMOS™ Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 90A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3.8mOhm @ 90A, 10V Vgs(th) (Max) @ Id 2.2V @ 35µA Gate Charge (Qg) (Max) @ Vgs 60nC @ 10V Vgs (Max) +20V, -16V Input Capacitance (Ciss) (Max) @ Vds 4690pF @ 25V FET Feature - Power Dissipation (Max) 71W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3-313 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
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SI7686DP-T1-E3 Vishay Siliconix, N-Channel 30V 35A (Tc) 5W (Ta), 37.9W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®
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AO4430 Alpha & Omega Semiconductor Inc., N-Channel 30V 18A (Ta) 3W (Ta) Surface Mount 8-SOIC,
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STB25N80K5 STMicroelectronics, N-Channel 800V 19.5A (Tc) 250W (Tc) Surface Mount D2PAK, SuperMESH5™
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IRFS7734TRLPBF Infineon Technologies, N-Channel 75V 183A (Tc) 290W (Tc) Surface Mount D²PAK (TO-263AB), HEXFET®, StrongIRFET™
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FDP150N10 ON Semiconductor, N-Channel 100V 57A (Tc) 110W (Tc) Through Hole TO-220-3, PowerTrench®
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R6025JNZ4C13 Rohm Semiconductor, N-Channel 600V 25A (Tc) 306W (Tc) Through Hole TO-247G,
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FDD8878 ON Semiconductor, N-Channel 30V 11A (Ta), 40A (Tc) 40W (Tc) Surface Mount TO-252AA, PowerTrench®
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IXFH16N50P3 IXYS, N-Channel 500V 16A (Tc) 330W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™, Polar3™
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STP10LN80K5 STMicroelectronics, N-Channel 800V 8A (Tc) 110W (Tc) Through Hole TO-220, MDmesh™
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IRLMS1503TRPBF Infineon Technologies, N-Channel 30V 3.2A (Ta) 1.7W (Ta) Surface Mount Micro6™(TSOP-6), HEXFET®
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NTD5C446NT4G ON Semiconductor, N-Channel 40V 110A (Tc) 66W (Tc) Surface Mount DPAK (SINGLE GAUGE),
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