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RF4E100AJTCR

RF4E100AJTCR

Part NumberRF4E100AJTCR

ManufacturerRohm Semiconductor

DescriptionMOSFET N-CH 30V 10A HUML2020L8

DatasheetRF4E100AJ

Package / Case8-PowerUDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 30V 10A (Ta) 2W (Tc) Surface Mount HUML2020L8

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RF4E100AJTCR - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RF4E100AJ
Standard Package	1
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30V
Current - Continuous Drain (Id) @ 25°C	10A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	12.4mOhm @ 10A, 4.5V
Vgs(th) (Max) @ Id	1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	13nC @ 4.5V
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	1460pF @ 15V
FET Feature	-
Power Dissipation (Max)	2W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	HUML2020L8
Package / Case	8-PowerUDFN

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