Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR616DP-T1-GE3

SIR616DP-T1-GE3

SIR616DP-T1-GE3

Part NumberSIR616DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 200V 20.2A SO-8

DatasheetSIR616DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 200V 20.2A (Tc) 52W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR616DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR616DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR616DP-T1-GE3.
We are offering SIR616DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR616DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR616DP
Standard Package	1
Manufacturer	Vishay Siliconix
Series	ThunderFET®
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200V
Current - Continuous Drain (Id) @ 25°C	20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Rds On (Max) @ Id, Vgs	50.5mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	28nC @ 7.5V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 100V
FET Feature	-
Power Dissipation (Max)	52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR616DP-T1-GE3 - Related Products

	BSP129H6906XTSA1	Infineon Technologies, N-Channel 240V 350mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS™	View
	FDD86369	ON Semiconductor, N-Channel 80V 90A (Tc) 150W (Tj) Surface Mount D-PAK (TO-252), Automotive, AEC-Q101, PowerTrench®	View
	SQ3418EV-T1_GE3	Vishay Siliconix, N-Channel 40V 8A (Tc) 5W (Tc) Surface Mount 6-TSOP, Automotive, AEC-Q101, TrenchFET®	View
	NTMFS6H801NT1G	ON Semiconductor, N-Channel 80V 23A (Ta), 157A (Tc) 3.8W (Ta), 166W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL),	View
	STP110N7F6	STMicroelectronics, N-Channel 68V 110A (Tc) 176W (Tc) Through Hole TO-220, STripFET™ F6	View
	SIHB180N60E-GE3	Vishay Siliconix, N-Channel 600V 19A (Tc) 156W (Tc) Surface Mount D²PAK (TO-263),	View
	BSS214NWH6327XTSA1	Infineon Technologies, N-Channel 20V 1.5A (Ta) 500mW (Ta) Surface Mount PG-SOT323-3, OptiMOS™	View
	IRFU220PBF	Vishay Siliconix, N-Channel 200V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA,	View
	STW9N150	STMicroelectronics, N-Channel 1500V 8A (Tc) 320W (Tc) Through Hole TO-247-3, PowerMESH™	View
	STF18N60M6	STMicroelectronics, N-Channel 600V 13A (Tc) 25W (Tc) Through Hole TO-220FP, MDmesh™ M6	View
	FDD86252	ON Semiconductor, N-Channel 150V 5A (Ta), 27A (Tc) 3.1W (Ta), 89W (Tc) Surface Mount D-PAK (TO-252), PowerTrench®	View
	IRFH5006TRPBF	Infineon Technologies, N-Channel 60V 21A (Ta), 100A (Tc) 3.6W (Ta) Surface Mount 8-PQFN (5x6), HEXFET®	View

SIR616DP-T1-GE3 - Tags

SIR616DP-T1-GE3 SIR616DP-T1-GE3 PDF SIR616DP-T1-GE3 datasheet SIR616DP-T1-GE3 specification SIR616DP-T1-GE3 image SIR616DP-T1-GE3 India Renesas Electronics India SIR616DP-T1-GE3 buy SIR616DP-T1-GE3 SIR616DP-T1-GE3 price SIR616DP-T1-GE3 distributor SIR616DP-T1-GE3 supplier SIR616DP-T1-GE3 wholesales