Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPP076N12N3GXKSA1

IPP076N12N3GXKSA1

IPP076N12N3GXKSA1

Part NumberIPP076N12N3GXKSA1

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 120V 100A TO220-3

DatasheetIPx076N12N3 G

Package / CaseTO-220-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 120V 100A (Tc) 188W (Tc) Through Hole PG-TO220-3

To learn about the specification of IPP076N12N3GXKSA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPP076N12N3GXKSA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPP076N12N3GXKSA1.
We are offering IPP076N12N3GXKSA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPP076N12N3GXKSA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPx076N12N3 G
Standard Package	500
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	120V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	7.6mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	101nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6640pF @ 60V
FET Feature	-
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	PG-TO220-3
Package / Case	TO-220-3

IPP076N12N3GXKSA1 - Related Products

	SIJ438ADP-T1-GE3	Vishay Siliconix, N-Channel 40V 45.3A (Ta), 169A(Tc) 5W (Ta), 69.4W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET® Gen IV	View
	STP75NF20	STMicroelectronics, N-Channel 200V 75A (Tc) 190W (Tc) Through Hole TO-220AB, STripFET™	View
	SISS22DN-T1-GE3	Vishay Siliconix, N-Channel 60V 25A (Ta), 90.6A (Tc) 5W (Ta), 65.7W (Tc) Surface Mount PowerPAK® 1212-8S (3.3x3.3), TrenchFET® Gen IV	View
	SQD40030E_GE3	Vishay Siliconix, N-Channel 40V Surface Mount TO-252AA, Automotive, AEC-Q101, TrenchFET®	View
	AOT10N60	Alpha & Omega Semiconductor Inc., N-Channel 600V 10A (Tc) 250W (Tc) Through Hole TO-220,	View
	STB80NF03L-04T4	STMicroelectronics, N-Channel 30V 80A (Tc) 300W (Tc) Surface Mount D2PAK, STripFET™ II	View
	DMN3010LFG-7	Diodes Incorporated, N-Channel 30V 11A (Ta), 30A (Tc) 900mW (Ta) Surface Mount PowerDI3333-8,	View
	STF3N80K5	STMicroelectronics, N-Channel 800V 2.5A (Tc) 20W (Tc) Through Hole TO-220FP, SuperMESH5™	View
	BSP149H6906XTSA1	Infineon Technologies, N-Channel 200V 660mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4, SIPMOS®	View
	ZXMN2F30FHTA	Diodes Incorporated, N-Channel 20V 4.1A (Ta) 960mW (Ta) Surface Mount SOT-23-3,	View
	2SK3018T106	Rohm Semiconductor, N-Channel 30V 100mA (Ta) 200mW (Ta) Surface Mount UMT3,	View
	TSM60NB900CH C5G	Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 36.8W (Tc) Through Hole TO-251 (IPAK),	View

IPP076N12N3GXKSA1 - Tags

IPP076N12N3GXKSA1 IPP076N12N3GXKSA1 PDF IPP076N12N3GXKSA1 datasheet IPP076N12N3GXKSA1 specification IPP076N12N3GXKSA1 image IPP076N12N3GXKSA1 India Renesas Electronics India IPP076N12N3GXKSA1 buy IPP076N12N3GXKSA1 IPP076N12N3GXKSA1 price IPP076N12N3GXKSA1 distributor IPP076N12N3GXKSA1 supplier IPP076N12N3GXKSA1 wholesales