IRF100P219XKMA1
IRF100P219XKMA1
Part Number IRF100P219XKMA1 Description TRENCH_MOSFETS Package / Case TO-247-3Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 100V 341W (Tc) Through Hole TO-247AC
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IRF100P219XKMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IRF100P219 Standard Package 400 Manufacturer Infineon Technologies Series StrongIRFET™ Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.7mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.8V @ 278µA Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 12020pF @ 50V FET Feature - Power Dissipation (Max) 341W (Tc) Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole Supplier Device Package TO-247AC Package / Case TO-247-3
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