IRF100P219XKMA1


IRF100P219XKMA1

Part NumberIRF100P219XKMA1

Manufacturer

Description

Datasheet

Package / CaseTO-247-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IRF100P219XKMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package400
ManufacturerInfineon Technologies
SeriesStrongIRFET™
PackagingTube
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100V
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs1.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id3.8V @ 278µA
Gate Charge (Qg) (Max) @ Vgs270nC @ 10V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds12020pF @ 50V
FET Feature-
Power Dissipation (Max)341W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247AC
Package / CaseTO-247-3

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