Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

IPN80R1K2P7ATMA1

Part NumberIPN80R1K2P7ATMA1

ManufacturerInfineon Technologies

DescriptionCOOLMOS P7 800V SOT-223

DatasheetIPN80R1K2P7

Package / CaseTO-261-3

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 4.5A (Tc) 6.8W (Tc) Surface Mount PG-SOT223

To learn about the specification of IPN80R1K2P7ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPN80R1K2P7ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPN80R1K2P7ATMA1.
We are offering IPN80R1K2P7ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

IPN80R1K2P7ATMA1 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPN80R1K2P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id	3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 500V
FET Feature	-
Power Dissipation (Max)	6.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-3

IPN80R1K2P7ATMA1 - Related Products

	IRLS4030TRLPBF	Infineon Technologies, N-Channel 100V 180A (Tc) 370W (Tc) Surface Mount D2PAK, HEXFET®	View
	QS5U13TR	Rohm Semiconductor, N-Channel 30V 2A (Ta) 1.25W (Ta) Surface Mount TSMT5,	View
	SI7430DP-T1-GE3	Vishay Siliconix, N-Channel 150V 26A (Tc) 5.2W (Ta), 64W (Tc) Surface Mount PowerPAK® SO-8,	View
	ZXMN6A25GTA	Diodes Incorporated, N-Channel 60V 4.8A (Ta) 2W (Ta) Surface Mount SOT-223,	View
	SI1062X-T1-GE3	Vishay Siliconix, N-Channel 20V 220mW (Ta) Surface Mount SC-89-3, TrenchFET®	View
	TPH11003NL,LQ	Toshiba Semiconductor and Storage, N-Channel 30V 32A (Ta) 1.6W (Ta), 21W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSVIII-H	View
	PSMN8R3-40YS,115	Nexperia USA Inc., N-Channel 40V 70A (Tc) 74W (Tc) Surface Mount LFPAK56, Power-SO8,	View
	FDPF33N25T	ON Semiconductor, N-Channel 250V 33A (Tc) 37W (Tc) Through Hole TO-220F, UniFET™	View
	CEDM7004VL TR	Central Semiconductor Corp, N-Channel 30V 450mA (Ta) 100mW (Ta) Surface Mount SOT-883VL,	View
	STW10N105K5	STMicroelectronics, N-Channel 1050V 6A (Tc) 130W (Tc) Through Hole TO-247, SuperMESH5™	View
	BUK7Y25-60EX	Nexperia USA Inc., N-Channel 60V 34A (Tc) 64W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	IRF60R217	Infineon Technologies, N-Channel 60V 58A (Tc) 83W (Tc) Surface Mount D-PAK (TO-252AA), StrongIRFET™	View

IPN80R1K2P7ATMA1 - Tags

IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 PDF IPN80R1K2P7ATMA1 datasheet IPN80R1K2P7ATMA1 specification IPN80R1K2P7ATMA1 image IPN80R1K2P7ATMA1 India Renesas Electronics India IPN80R1K2P7ATMA1 buy IPN80R1K2P7ATMA1 IPN80R1K2P7ATMA1 price IPN80R1K2P7ATMA1 distributor IPN80R1K2P7ATMA1 supplier IPN80R1K2P7ATMA1 wholesales