IPN80R1K2P7ATMA1

Part NumberIPN80R1K2P7ATMA1

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPN80R1K2P7
Standard Package	1
Manufacturer	Infineon Technologies
Series	CoolMOS™ P7
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id	3.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	300pF @ 500V
FET Feature	-
Power Dissipation (Max)	6.8W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-SOT223
Package / Case	TO-261-3

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