IPL60R199CPAUMA1
IPL60R199CPAUMA1
Part Number IPL60R199CPAUMA1 Description MOSFET N-CH 650V 16.4A 4VSON Package / Case 4-PowerTSFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 650V 16.4A (Tc) 139W (Tc) Surface Mount PG-VSON-4
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IPL60R199CPAUMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPL60R199CP Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650V Current - Continuous Drain (Id) @ 25°C 16.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 199mOhm @ 9.9A, 10V Vgs(th) (Max) @ Id 3.5V @ 660µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1520pF @ 100V FET Feature - Power Dissipation (Max) 139W (Tc) Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-VSON-4 Package / Case 4-PowerTSFN
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