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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK965R4-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V
Rds On (Max) @ Id, Vgs 4.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 33.9nC @ 5V
Vgs (Max) ±10V
Input Capacitance (Ciss) (Max) @ Vds 4483pF @ 25V
FET Feature -
Power Dissipation (Max) 137W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
FDN8601
ON Semiconductor, N-Channel 100V 2.7A (Ta) 1.5W (Ta) Surface Mount SuperSOT-3, PowerTrench®
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BUK762R9-40E,118
Nexperia USA Inc., N-Channel 40V 100A (Tc) 234W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™
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ON Semiconductor, N-Channel 30V 35A (Ta), 185A (Tc) 2.3W (Ta), 64W (Tc) Surface Mount Power33, PowerTrench®
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Vishay Siliconix, N-Channel 60V 6A (Tc) 3.2W (Ta), 19.8W (Tc) Surface Mount PowerPAK® 1212-8, TrenchFET®
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