SI7114ADN-T1-GE3
SI7114ADN-T1-GE3
Part Number SI7114ADN-T1-GE3 Description MOSFET N-CH 30V 35A PPAK 1212-8 Package / Case PowerPAK® 1212-8Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 30V 35A (Tc) 3.7W (Ta), 39W (Tc) Surface Mount PowerPAK® 1212-8
To learn about the specification of SI7114ADN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SI7114ADN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SI7114ADN-T1-GE3.
We are offering SI7114ADN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
SI7114ADN-T1-GE3 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet SI7114ADN Standard Package 1 Manufacturer Vishay Siliconix Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 35A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 7.5mOhm @ 18A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1230pF @ 15V FET Feature - Power Dissipation (Max) 3.7W (Ta), 39W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PowerPAK® 1212-8 Package / Case PowerPAK® 1212-8
SI7114ADN-T1-GE3 - Related ProductsMore >>
TSM220NB06LCR RLG Taiwan Semiconductor Corporation, N-Channel 60V 8A (Ta), 35A (Tc) 3.1W (Ta), 68W (Tc) Surface Mount 8-PDFN (5x6),
View
SSM3K361R,LF Toshiba Semiconductor and Storage, N-Channel 100V 3.5A (Ta) 1.2W (Ta) Surface Mount SOT-23F, U-MOSVIII-H
View
IXTA100N15X4 IXYS, N-Channel 150V 100A (Tc) 375W (Tc) Surface Mount TO-263AA,
View
APT37M100B2 Microsemi Corporation, N-Channel 1000V 37A (Tc) 1135W (Tc) Through Hole T-MAX™ [B2],
View
QS5U36TR Rohm Semiconductor, N-Channel 20V 2.5A (Ta) 1.25W (Ta) Surface Mount TSMT5,
View
IPDD60R050G7XTMA1 Infineon Technologies, N-Channel 600V 47A (Tc) 278W (Tc) Surface Mount PG-HDSOP-10-1, CoolMOS™ G7
View
FQA13N80-F109 ON Semiconductor, N-Channel 800V 12.6A (Tc) 300W (Tc) Through Hole TO-3PN, QFET®
View
SI2312BDS-T1-E3 Vishay Siliconix, N-Channel 20V 3.9A (Ta) 750mW (Ta) Surface Mount SOT-23-3 (TO-236), TrenchFET®
View
DMN2011UFDF-7 Diodes Incorporated, N-Channel 20V 14.2A (Ta) 2.1W (Ta) Surface Mount U-DFN2020-6 (Type F),
View
IRFB4410ZGPBF Infineon Technologies, N-Channel 100V 97A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
View
2N7000-D26Z ON Semiconductor, N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3,
View
TPH1R204PL,L1Q Toshiba Semiconductor and Storage, N-Channel 40V 150A (Tc) 960mW (Ta), 132W (Tc) Surface Mount 8-SOP Advance (5x5), U-MOSIX-H
View
SI7114ADN-T1-GE3 - Tags
English
