IPD60R950C6ATMA1
IPD60R950C6ATMA1
Part Number IPD60R950C6ATMA1 Description MOSFET N-CH 600V 4.4A TO252 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 600V 4.4A (Tc) 37W (Tc) Surface Mount PG-TO252-3
To learn about the specification of IPD60R950C6ATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add IPD60R950C6ATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of IPD60R950C6ATMA1.
We are offering IPD60R950C6ATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
IPD60R950C6ATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx60R950C6 Standard Package 1 Manufacturer Infineon Technologies Series CoolMOS™ C6 Packaging Cut Tape (CT) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 4.4A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 950mOhm @ 1.5A, 10V Vgs(th) (Max) @ Id 3.5V @ 130µA Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 280pF @ 100V FET Feature - Power Dissipation (Max) 37W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TO252-3 Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
IPD60R950C6ATMA1 - Related ProductsMore >>
TSM60NB900CH C5G Taiwan Semiconductor Corporation, N-Channel 600V 4A (Tc) 36.8W (Tc) Through Hole TO-251 (IPAK),
View
IRFR4615TRLPBF Infineon Technologies, N-Channel 150V 33A (Tc) 144W (Tc) Surface Mount D-Pak, HEXFET®
View
IRL40T209ATMA1 Infineon Technologies, N-Channel 40V 300A (Tc) 500W (Tc) Surface Mount PG-HSOF-8-1, StrongIRFET™
View
STU2LN60K3 STMicroelectronics, N-Channel 600V 2A (Tc) 45W (Tc) Through Hole I-PAK, SuperMESH3™
View
FQP13N50C ON Semiconductor, N-Channel 500V 13A (Tc) 195W (Tc) Through Hole TO-220-3, QFET®
View
IRFBF30STRLPBF Vishay Siliconix, N-Channel 900V 3.6A (Tc) 125W (Tc) Surface Mount TO-263 (D²Pak),
View
IXFN170N25X3 IXYS, N-Channel 250V 170A (Tc) 390W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
SQ4410EY-T1_GE3 Vishay Siliconix, N-Channel 30V 15A (Tc) 5W (Tc) Surface Mount 8-SO, TrenchFET®
View
IRFB13N50APBF Vishay Siliconix, N-Channel 500V 14A (Tc) 250W (Tc) Through Hole TO-220AB,
View
AON6240 Alpha & Omega Semiconductor Inc., N-Channel 40V 27A (Ta), 85A (Tc) 2.3W (Ta), 83W (Tc) Surface Mount 8-DFN (5x6),
View
SSM3K56MFV,L3F Toshiba Semiconductor and Storage, N-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount VESM, U-MOSVII-H
View
STF33N60M6 STMicroelectronics, N-Channel 600V 25A (Tc) 35W (Tc) Through Hole TO-220FP, MDmesh™ M6
View
IPD60R950C6ATMA1 - Tags
English
