Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIR416DP-T1-GE3

SIR416DP-T1-GE3

SIR416DP-T1-GE3

Part NumberSIR416DP-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 50A PPAK SO-8

DatasheetSIR416DP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 50A (Tc) 5.2W (Ta), 69W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SIR416DP-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIR416DP-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIR416DP-T1-GE3.
We are offering SIR416DP-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIR416DP-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIR416DP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	3.8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	3350pF @ 20V
FET Feature	-
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SIR416DP-T1-GE3 - Related Products

	PSMN8R0-40BS,118	Nexperia USA Inc., N-Channel 40V 77A (Tc) 86W (Tc) Surface Mount D2PAK,	View
	BUK9Y11-80EX	Nexperia USA Inc., N-Channel 80V 84A (Tc) 194W (Tc) Surface Mount LFPAK56, Power-SO8, TrenchMOS™	View
	PSMN015-60PS,127	Nexperia USA Inc., N-Channel 60V 50A (Tc) 86W (Tc) Through Hole TO-220AB,	View
	QS5U34TR	Rohm Semiconductor, N-Channel 20V 1.5A (Ta) 900mW (Ta) Surface Mount TSMT5,	View
	FDB12N50FTM-WS	ON Semiconductor, N-Channel 500V 11.5A (Tc) 165W (Tc) Surface Mount D²PAK, UniFET™	View
	FDT459N	ON Semiconductor, N-Channel 30V 6.5A (Ta) 3W (Ta) Surface Mount SOT-223-4,	View
	STD6N90K5	STMicroelectronics, N-Channel 900V 6A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ K5	View
	IRL1004PBF	Infineon Technologies, N-Channel 40V 130A (Tc) 200W (Tc) Through Hole TO-220AB, HEXFET®	View
	MCPF05N80-BP	Micro Commercial Co, N-Channel 800V 5A 25W Through Hole TO-220F,	View
	NVD5C454NT4G	ON Semiconductor, N-Channel 40V 19A (Ta), 82A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount DPAK (SINGLE GAUGE), Automotive, AEC-Q101	View
	BSZ900N15NS3GATMA1	Infineon Technologies, N-Channel 150V 13A (Tc) 38W (Tc) Surface Mount PG-TSDSON-8, OptiMOS™	View
	DMTH6004LPS-13	Diodes Incorporated, N-Channel 60V 22A (Ta), 100A (Tc) 2.6W (Ta), 138W (Tc) Surface Mount PowerDI5060-8,	View

SIR416DP-T1-GE3 - Tags

SIR416DP-T1-GE3 SIR416DP-T1-GE3 PDF SIR416DP-T1-GE3 datasheet SIR416DP-T1-GE3 specification SIR416DP-T1-GE3 image SIR416DP-T1-GE3 India Renesas Electronics India SIR416DP-T1-GE3 buy SIR416DP-T1-GE3 SIR416DP-T1-GE3 price SIR416DP-T1-GE3 distributor SIR416DP-T1-GE3 supplier SIR416DP-T1-GE3 wholesales