IPC100N04S5L2R6ATMA1


IPC100N04S5L2R6ATMA1

Part NumberIPC100N04S5L2R6ATMA1

Manufacturer

Description

Datasheet

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

IPC100N04S5L2R6ATMA1 - Product Attributes

Categories Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet
Standard Package1
ManufacturerInfineon Technologies
SeriesAutomotive, AEC-Q101, OptiMOS™
PackagingCut Tape (CT)
Part StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.6mOhm @ 50A, 10V
Vgs(th) (Max) @ Id2V @ 30µA
Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds2925pF @ 25V
FET Feature-
Power Dissipation (Max)75W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-34
Package / Case8-PowerTDFN

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IPC100N04S5L2R6ATMA1 - Tags

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