Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SQJ860EP-T1_GE3

SQJ860EP-T1_GE3

SQJ860EP-T1_GE3

Part NumberSQJ860EP-T1_GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 40V 60A POWERPAKSO-8

DatasheetSQJ860EP

Package / CasePowerPAK® SO-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 40V 60A (Tc) 48W (Tc) Surface Mount PowerPAK® SO-8

To learn about the specification of SQJ860EP-T1_GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SQJ860EP-T1_GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SQJ860EP-T1_GE3.
We are offering SQJ860EP-T1_GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SQJ860EP-T1_GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SQJ860EP
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	Automotive, AEC-Q101, TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	2700pF @ 25V
FET Feature	-
Power Dissipation (Max)	48W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® SO-8
Package / Case	PowerPAK® SO-8

SQJ860EP-T1_GE3 - Related Products

	IRFS3307TRLPBF	Infineon Technologies, N-Channel 75V 120A (Tc) 200W (Tc) Surface Mount D2PAK, HEXFET®	View
	IRFP31N50LPBF	Vishay Siliconix, N-Channel 500V 31A (Tc) 460W (Tc) Through Hole TO-247-3,	View
	FDD5N50TM-WS	ON Semiconductor, N-Channel 500V 4A (Tc) 40W (Tc) Surface Mount D-Pak, UniFET™	View
	FDP047N08	ON Semiconductor, N-Channel 75V 164A (Tc) 268W (Tc) Through Hole TO-220-3, PowerTrench®	View
	SSM6K202FE,LF	Toshiba Semiconductor and Storage, N-Channel 30V 2.3A (Ta) 500mW (Ta) Surface Mount ES6 (1.6x1.6),	View
	IPB020N08N5ATMA1	Infineon Technologies, N-Channel 80V 120A (Tc) 300W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	STD18N55M5	STMicroelectronics, N-Channel 550V 16A (Tc) 110W (Tc) Surface Mount DPAK, MDmesh™ V	View
	NTJS4405NT1G	ON Semiconductor, N-Channel 25V 1A (Ta) 630mW (Ta) Surface Mount SC-88/SC70-6/SOT-363,	View
	IPB80N04S403ATMA1	Infineon Technologies, N-Channel 40V 80A (Tc) 94W (Tc) Surface Mount PG-TO263-3-2, OptiMOS™	View
	BUK7Y2R5-40HX	Nexperia USA Inc., N-Channel 40V 120A (Ta) 190W (Ta) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101	View
	NTF3055-100T1G	ON Semiconductor, N-Channel 60V 3A (Ta) 1.3W (Ta) Surface Mount SOT-223 (TO-261),	View
	STB43N65M5	STMicroelectronics, N-Channel 650V 42A (Tc) 250W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, MDmesh™	View

SQJ860EP-T1_GE3 - Tags

SQJ860EP-T1_GE3 SQJ860EP-T1_GE3 PDF SQJ860EP-T1_GE3 datasheet SQJ860EP-T1_GE3 specification SQJ860EP-T1_GE3 image SQJ860EP-T1_GE3 India Renesas Electronics India SQJ860EP-T1_GE3 buy SQJ860EP-T1_GE3 SQJ860EP-T1_GE3 price SQJ860EP-T1_GE3 distributor SQJ860EP-T1_GE3 supplier SQJ860EP-T1_GE3 wholesales