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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet IPx65R110CFDA
Standard Package 1
Manufacturer Infineon Technologies
Series Automotive, AEC-Q101, CoolMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650V
Current - Continuous Drain (Id) @ 25°C 31.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 110mOhm @ 12.7A, 10V
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
FET Feature -
Power Dissipation (Max) 277.8W (Tc)
Operating Temperature -40°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D²PAK (TO-263AB)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRFH8202TRPBF
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BSZ900N20NS3GATMA1
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SQS462EN-T1_GE3
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IRFR3410TRLPBF
Infineon Technologies, N-Channel 100V 31A (Tc) 3W (Ta), 110W (Tc) Surface Mount D-Pak, HEXFET®
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FDMC86244
ON Semiconductor, N-Channel 150V 2.8A (Ta), 9.4A (Tc) 2.3W (Ta), 26W (Tc) Surface Mount 8-MLP (3.3x3.3), PowerTrench®
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BSC019N06NSATMA1
Infineon Technologies, N-Channel 60V 100A (Ta) 136W (Ta) Surface Mount PG-TDSON-8 FL, OptiMOS™
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