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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet STP30NF20, STB30NF20, STW30NF20
Standard Package 1
Manufacturer STMicroelectronics
Series STripFET™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1597pF @ 25V
FET Feature -
Power Dissipation (Max) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
BSZ0901NSIATMA1
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NTB5405NT4G
ON Semiconductor, N-Channel 40V 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount D2PAK,
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IRFP2907PBF
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FDB8832
ON Semiconductor, N-Channel 30V 34A (Ta), 80A (Tc) 300W (Tc) Surface Mount TO-263AB, PowerTrench®
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IPB117N20NFDATMA1
Infineon Technologies, N-Channel 200V 84A (Tc) 300W (Tc) Surface Mount TO-263-3, OptiMOS™
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STY112N65M5
STMicroelectronics, N-Channel 650V 96A (Tc) 625W (Tc) Through Hole MAX247™, MDmesh™ V
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IRLB3813PBF
Infineon Technologies, N-Channel 30V 260A (Tc) 230W (Tc) Through Hole TO-220AB, HEXFET®
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IRFB4110PBF
Infineon Technologies, N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB, HEXFET®
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RCX510N25
Rohm Semiconductor, N-Channel 250V 51A (Ta) 40W (Tc) Through Hole TO-220FM,
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IPC100N04S5L1R1ATMA1
Infineon Technologies, N-Channel 40V 100A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-34, Automotive, AEC-Q101, OptiMOS™
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FDMS86150
ON Semiconductor, N-Channel 100V 16A (Ta), 60A (Tc) 2.7W (Ta), 156W (Tc) Surface Mount Power56, PowerTrench®
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IRLL110TRPBF
Vishay Siliconix, N-Channel 100V 1.5A (Tc) 2W (Ta), 3.1W (Tc) Surface Mount SOT-223,
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