Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIS892DN-T1-GE3

SIS892DN-T1-GE3

SIS892DN-T1-GE3

Part NumberSIS892DN-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 100V 30A 1212-8 PPAK

DatasheetSIS892DN

Package / CasePowerPAK® 1212-8

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 100V 30A (Tc) 3.7W (Ta), 52W (Tc) Surface Mount PowerPAK® 1212-8

To learn about the specification of SIS892DN-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIS892DN-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIS892DN-T1-GE3.
We are offering SIS892DN-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIS892DN-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIS892DN
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	TrenchFET®
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	30A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	29mOhm @ 10A, 10V
Vgs(th) (Max) @ Id	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	21.5nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	611pF @ 50V
FET Feature	-
Power Dissipation (Max)	3.7W (Ta), 52W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 1212-8
Package / Case	PowerPAK® 1212-8

SIS892DN-T1-GE3 - Related Products

	PMZB370UNE,315	Nexperia USA Inc., N-Channel 30V 900mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3,	View
	DMN4008LFG-7	Diodes Incorporated, N-Channel 40V 14.4A (Ta) 1W (Ta) Surface Mount PowerDI3333-8,	View
	SI4156DY-T1-GE3	Vishay Siliconix, N-Channel 30V 24A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	ZVN2106A	Diodes Incorporated, N-Channel 60V 450mA (Ta) 700mW (Ta) Through Hole TO-92-3,	View
	SIHP30N60E-E3	Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-220AB,	View
	SI4420BDY-T1-E3	Vishay Siliconix, N-Channel 30V 9.5A (Ta) 1.4W (Ta) Surface Mount 8-SO, TrenchFET®	View
	DMN10H220LE-13	Diodes Incorporated, N-Channel 100V 2.3A (Ta) 1.8W (Ta) Surface Mount SOT-223,	View
	TK380P65Y,RQ	Toshiba Semiconductor and Storage, N-Channel 650V 9.7A (Tc) 80W (Tc) Surface Mount DPAK, DTMOSV	View
	FDP42AN15A0	ON Semiconductor, N-Channel 150V 5A (Ta), 35A (Tc) 150W (Tc) Through Hole TO-220-3, PowerTrench®	View
	STL6N3LLH6	STMicroelectronics, N-Channel 30V 2.4W (Tc) Surface Mount PowerFlat™ (2x2), DeepGATE™, STripFET™ VI	View
	BSC009NE2LSATMA1	Infineon Technologies, N-Channel 25V 41A (Ta), 100A (Tc) 2.5W (Ta), 96W (Tc) Surface Mount PG-TDSON-8-7, OptiMOS™	View
	FDMS8460	ON Semiconductor, N-Channel 40V 25A (Ta), 49A (Tc) 2.5W (Ta), 104W (Tc) Surface Mount 8-PQFN (5x6), PowerTrench®	View

SIS892DN-T1-GE3 - Tags

SIS892DN-T1-GE3 SIS892DN-T1-GE3 PDF SIS892DN-T1-GE3 datasheet SIS892DN-T1-GE3 specification SIS892DN-T1-GE3 image SIS892DN-T1-GE3 India Renesas Electronics India SIS892DN-T1-GE3 buy SIS892DN-T1-GE3 SIS892DN-T1-GE3 price SIS892DN-T1-GE3 distributor SIS892DN-T1-GE3 supplier SIS892DN-T1-GE3 wholesales