BSZ12DN20NS3GATMA1
BSZ12DN20NS3GATMA1
Part Number BSZ12DN20NS3GATMA1 Description MOSFET N-CH 200V 11.3A 8TSDSON Package / Case 8-PowerTDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 200V 11.3A (Tc) 50W (Tc) Surface Mount PG-TSDSON-8
To learn about the specification of BSZ12DN20NS3GATMA1, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add BSZ12DN20NS3GATMA1 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of BSZ12DN20NS3GATMA1.
We are offering BSZ12DN20NS3GATMA1 for competitive price in the global market, please send us a quota request for pricing. Thank you!
Payment Methods
Delivery Services
BSZ12DN20NS3GATMA1 - Product Attributes
Categories
Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BSZ12DN20NS3G Standard Package 5000 Manufacturer Infineon Technologies Series OptiMOS™ Packaging Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 11.3A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 125mOhm @ 5.7A, 10V Vgs(th) (Max) @ Id 4V @ 25µA Gate Charge (Qg) (Max) @ Vgs 8.7nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 680pF @ 100V FET Feature - Power Dissipation (Max) 50W (Tc) Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Surface Mount Supplier Device Package PG-TSDSON-8 Package / Case 8-PowerTDFN
BSZ12DN20NS3GATMA1 - Related ProductsMore >>
IRFP150NPBF Infineon Technologies, N-Channel 100V 42A (Tc) 160W (Tc) Through Hole TO-247AC, HEXFET®
View
STF13N80K5 STMicroelectronics, N-Channel 800V 12A (Tc) 35W (Tc) Through Hole TO-220FP, SuperMESH5™
View
SQJA94EP-T1_GE3 Vishay Siliconix, N-Channel 80V 46A (Tc) 55W (Tc) Surface Mount PowerPAK® SO-8, Automotive, AEC-Q101, TrenchFET®
View
SI8812DB-T2-E1 Vishay Siliconix, N-Channel 20V 500mW (Ta) Surface Mount 4-Microfoot, TrenchFET®
View
STY112N65M5 STMicroelectronics, N-Channel 650V 96A (Tc) 625W (Tc) Through Hole MAX247™, MDmesh™ V
View
SIHG30N60E-E3 Vishay Siliconix, N-Channel 600V 29A (Tc) 250W (Tc) Through Hole TO-247AC,
View
IPD60R1K4C6ATMA1 Infineon Technologies, N-Channel 600V 3.2A (Tc) 28.4W (Tc) Surface Mount PG-TO252-3, CoolMOS™ C6
View
IXFH60N65X2 IXYS, N-Channel 650V 60A (Tc) 780W (Tc) Through Hole, HiPerFET™
View
FQPF16N25C ON Semiconductor, N-Channel 250V 15.6A (Tc) 43W (Tc) Through Hole TO-220F, QFET®
View
IXFH52N30Q IXYS, N-Channel 300V 52A (Tc) 360W (Tc) Through Hole TO-247AD (IXFH), HiPerFET™
View
IPP030N10N5AKSA1 Infineon Technologies, N-Channel 100V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3, OptiMOS™
View
IXFN240N25X3 IXYS, N-Channel 250V 240A (Tc) 695W (Tc) Chassis Mount SOT-227B, HiPerFET™
View
BSZ12DN20NS3GATMA1 - Tags
English
