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IPA80R650CEXKSA2

IPA80R650CEXKSA2

Part NumberIPA80R650CEXKSA2

ManufacturerInfineon Technologies

DescriptionMOSFET N-CH 800V TO-220-3

DatasheetIPA80R650CE

Package / CaseTO-220-3 Full Pack

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 800V 8A (Ta) 33W (Tc) Through Hole TO-220-3F

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IPA80R650CEXKSA2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IPA80R650CE
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolMOS™
Packaging	Tube
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800V
Current - Continuous Drain (Id) @ 25°C	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	650mOhm @ 5.1A, 10V
Vgs(th) (Max) @ Id	3.9V @ 470µA
Gate Charge (Qg) (Max) @ Vgs	45nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1100pF @ 100V
FET Feature	-
Power Dissipation (Max)	33W (Tc)
Operating Temperature	-40°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3F
Package / Case	TO-220-3 Full Pack

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