Home/Product Catalog/Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single/ SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

SIHH26N60E-T1-GE3

Part NumberSIHH26N60E-T1-GE3

ManufacturerVishay Siliconix

DescriptionMOSFET N-CH 600V 25A POWERPAK8X8

DatasheetSIHH26N60E

Package / Case8-PowerTDFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 600V 25A (Tc) 202W (Tc) Surface Mount PowerPAK® 8 x 8

To learn about the specification of SIHH26N60E-T1-GE3, please search the datasheet by clicking the link above. If you couldn't find the correct datasheet, please refer to the manufacturer's official datasheet.
To process your RFQ, please add SIHH26N60E-T1-GE3 with quantity into BOM. Icapacitors.com does NOT require any registration to request a quote of SIHH26N60E-T1-GE3.
We are offering SIHH26N60E-T1-GE3 for competitive price in the global market, please send us a quota request for pricing. Thank you!

Payment Methods
Delivery Services

SIHH26N60E-T1-GE3 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	SIHH26N60E
Standard Package	3000
Manufacturer	Vishay Siliconix
Series	-
Packaging	Tape & Reel (TR)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	135mOhm @ 13A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	116nC @ 10V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2815pF @ 100V
FET Feature	-
Power Dissipation (Max)	202W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PowerPAK® 8 x 8
Package / Case	8-PowerTDFN

SIHH26N60E-T1-GE3 - Related Products

	IRFBF20STRLPBF	Vishay Siliconix, N-Channel 900V 1.7A (Tc) 3.1W (Ta), 54W (Tc) Surface Mount D2PAK,	View
	IXFX52N100X	IXYS, N-Channel 1000V 52A (Tc) 1250W (Tc) Through Hole PLUS247™, HiPerFET™	View
	STP24NF10	STMicroelectronics, N-Channel 100V 26A (Tc) 85W (Tc) Through Hole TO-220AB, STripFET™ II	View
	SIR404DP-T1-GE3	Vishay Siliconix, N-Channel 20V 60A (Tc) 6.25W (Ta), 104W (Tc) Surface Mount PowerPAK® SO-8, TrenchFET®	View
	TSM024NA04LCR RLG	Taiwan Semiconductor Corporation, N-Channel 40V 170A (Tc) 125W (Tc) Surface Mount 8-PDFN (5x6),	View
	IPB090N06N3GATMA1	Infineon Technologies, N-Channel 60V 50A (Tc) 71W (Tc) Surface Mount D²PAK (TO-263AB), OptiMOS™	View
	NTD4804NT4G	ON Semiconductor, N-Channel 30V 14.5A (Ta), 124A (Tc) 1.43W (Ta), 107W (Tc) Surface Mount DPAK,	View
	BUK965R8-100E,118	Nexperia USA Inc., N-Channel 100V 120A (Tc) 357W (Tc) Surface Mount D2PAK, Automotive, AEC-Q101, TrenchMOS™	View
	AO4430	Alpha & Omega Semiconductor Inc., N-Channel 30V 18A (Ta) 3W (Ta) Surface Mount 8-SOIC,	View
	SI4100DY-T1-E3	Vishay Siliconix, N-Channel 100V 6.8A (Tc) 2.5W (Ta), 6W (Tc) Surface Mount 8-SO, TrenchFET®	View
	IRFH8307TRPBF	Infineon Technologies, N-Channel 30V 42A (Ta), 100A (Tc) 3.6W (Ta), 156W (Tc) Surface Mount 8-PQFN (5x6), HEXFET®, StrongIRFET™	View
	SIHG21N60EF-GE3	Vishay Siliconix, N-Channel 600V 21A (Tc) 227W (Tc) Through Hole TO-247AC,	View

SIHH26N60E-T1-GE3 - Tags

SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 PDF SIHH26N60E-T1-GE3 datasheet SIHH26N60E-T1-GE3 specification SIHH26N60E-T1-GE3 image SIHH26N60E-T1-GE3 India Renesas Electronics India SIHH26N60E-T1-GE3 buy SIHH26N60E-T1-GE3 SIHH26N60E-T1-GE3 price SIHH26N60E-T1-GE3 distributor SIHH26N60E-T1-GE3 supplier SIHH26N60E-T1-GE3 wholesales