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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet BUK768R1-40E
Standard Package 1
Manufacturer Nexperia USA Inc.
Series Automotive, AEC-Q101, TrenchMOS™
Packaging Cut Tape (CT)
Part Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 7.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 1730pF @ 25V
FET Feature -
Power Dissipation (Max) 96W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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AON7406
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Taiwan Semiconductor Corporation, N-Channel 600V 4.5A (Tc) 50W (Tc) Through Hole ITO-220AB,
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IPA80R1K4P7XKSA1
Infineon Technologies, N-Channel 800V 4A (Tc) 24W (Tc) Through Hole TO-220-3F, CoolMOS™
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BUK9Y58-75B,115
Nexperia USA Inc., N-Channel 75V 20.73A (Tc) 60.4W (Tc) Surface Mount LFPAK56, Power-SO8, Automotive, AEC-Q101, TrenchMOS™
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