Categories	Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet	IKP39N65ES5
Standard Package	500
Manufacturer	Infineon Technologies
Series	TrenchStop™ 5
Packaging	Tube
Part Status	Active
IGBT Type	Trench Field Stop
Voltage - Collector Emitter Breakdown (Max)	650V
Current - Collector (Ic) (Max)	62A
Current - Collector Pulsed (Icm)	120A
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 39A
Power - Max	188W
Switching Energy	800µJ (on), 500µJ (off)
Input Type	Standard
Gate Charge	70nC
Td (on/off) @ 25°C	20ns/120ns
Test Condition	400V, 39A, 12.8Ohm, 15V
Reverse Recovery Time (trr)	84ns
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Through Hole
Package / Case	TO-220-3
Supplier Device Package	PG-TO220-3

IKP39N65ES5XKSA1	Infineon Technologies, IGBT Trench Field Stop 650V 62A 188W Through Hole PG-TO220-3, TrenchStop™ 5	View
FGL60N100BNTD	ON Semiconductor, IGBT NPT and Trench 1000V 60A 180W Through Hole TO-264-3,	View
HGTP7N60A4	ON Semiconductor, IGBT 600V 34A 125W Through Hole TO-220-3,	View
RGT16NS65DGC9	Rohm Semiconductor, IGBT Trench Field Stop 650V 16A 94W Through Hole TO-262,	View
FGA60N65SMD	ON Semiconductor, IGBT Field Stop 650V 120A 600W Through Hole TO-3P,	View
STGWT80H65FB	STMicroelectronics, IGBT Trench Field Stop 650V 120A 469W Through Hole TO-3P,	View
STGW80V60DF	STMicroelectronics, IGBT Trench Field Stop 600V 120A 469W Through Hole TO-247,	View
STGW30NC60WD	STMicroelectronics, IGBT 600V 60A 200W Through Hole TO-247-3, PowerMESH™	View
IXXH80N65B4	IXYS, IGBT PT 650V 160A 625W Through Hole TO-247 (IXXH), GenX4™, XPT™	View
RGTH60TK65DGC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 28A 61W Through Hole TO-3PFM,	View
RGTH00TS65GC11	Rohm Semiconductor, IGBT Trench Field Stop 650V 85A 277W Through Hole TO-247N,	View
STGB19NC60KDT4	STMicroelectronics, IGBT 600V 35A 125W Surface Mount D2PAK, PowerMESH™	View

IKP39N65ES5XKSA1

Part NumberIKP39N65ES5XKSA1