HGTD1N120BNS9A


HGTD1N120BNS9A

Part NumberHGTD1N120BNS9A

Manufacturer

Description

Datasheet

Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed Description

HGTD1N120BNS9A - Product Attributes

Categories Discrete Semiconductor Products / Transistors - IGBTs - Single
Datasheet
Standard Package1
ManufacturerON Semiconductor
Series-
PackagingCut Tape (CT)
Part StatusActive
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)1200V
Current - Collector (Ic) (Max)5.3A
Current - Collector Pulsed (Icm)6A
Vce(on) (Max) @ Vge, Ic2.9V @ 15V, 1A
Power - Max60W
Switching Energy70µJ (on), 90µJ (off)
Input TypeStandard
Gate Charge14nC
Td (on/off) @ 25°C15ns/67ns
Test Condition960V, 1A, 82Ohm, 15V
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA
Base Part NumberHGTD1N120

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HGTD1N120BNS9A - Tags

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