IDH20G120C5XKSA1

Part NumberIDH20G120C5XKSA1

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Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	IDH20G120C5
Standard Package	500
Manufacturer	Infineon Technologies
Series	CoolSiC™
Packaging	Tube
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	1200V
Current - Average Rectified (Io)	56A (DC)
Voltage - Forward (Vf) (Max) @ If	1.8V @ 20A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	123µA @ 1200V
Capacitance @ Vr, F	1050pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-220-2
Supplier Device Package	PG-TO220-2-1
Operating Temperature - Junction	-55°C ~ 175°C

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IDWD15G120C5XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 49A (DC) Through Hole PG-TO247-2, CoolSiC™	View
IDM02G120C5XTMA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 2A (DC) Surface Mount PG-TO252-2, CoolSiC™	View
IDH10G65C5XKSA2	Infineon Technologies, Diode Silicon Carbide Schottky 650V 10A (DC) Through Hole PG-TO220-2-1, CoolSiC™	View
IDH20G120C5XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 56A (DC) Through Hole PG-TO220-2-1, CoolSiC™	View
IDH04G65C6XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 12A (DC) Through Hole PG-TO220-2,	View
IDM05G120C5XTMA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 5A (DC) Surface Mount PG-TO252-2, CoolSiC™	View
IDH06G65C6XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 16A (DC) Through Hole PG-TO220-2,	View
IDM08G120C5XTMA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 8A (DC) Surface Mount PG-TO252-2, CoolSiC™	View
IDH12G65C6XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 650V 27A (DC) Through Hole PG-TO220-2,	View