AIDW40S65C5XKSA1

Part NumberAIDW40S65C5XKSA1

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Categories	Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet	AIDW40S65C5
Standard Package	240
Manufacturer	Infineon Technologies
Series	Automotive, AEC-Q100/101, CoolSiC™
Part Status	Active
Diode Type	Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max)	650V
Current - Average Rectified (Io)	40A (DC)
Voltage - Forward (Vf) (Max) @ If	1.7V @ 40A
Speed	No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)	0ns
Current - Reverse Leakage @ Vr	120µA @ 650V
Capacitance @ Vr, F	1138pF @ 1V, 1MHz
Mounting Type	Through Hole
Package / Case	TO-247-3
Supplier Device Package	PG-TO247-3-41
Operating Temperature - Junction	-40°C ~ 175°C

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IDH02G120C5XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 2A (DC) Through Hole PG-TO220-2-1, CoolSiC™	View
IDH16G65C5XKSA2	Infineon Technologies, Diode Silicon Carbide Schottky 650V 16A (DC) Through Hole PG-TO220-2-1, CoolSiC™	View
IDWD30G120C5XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 87A (DC) Through Hole PG-TO247-2, CoolSiC™	View
IDM08G120C5XTMA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 8A (DC) Surface Mount PG-TO252-2, CoolSiC™	View
IDH08G65C5XKSA2	Infineon Technologies, Diode Silicon Carbide Schottky 650V 8A (DC) Through Hole PG-TO220-2-1, CoolSiC™	View
IDWD40G120C5XKSA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 110A (DC) Through Hole PG-TO247-2, CoolSiC™	View
IDM08G120C5XTMA1	Infineon Technologies, Diode Silicon Carbide Schottky 1200V 8A (DC) Surface Mount PG-TO252-2, CoolSiC™	View
IDH03G65C5XKSA2	Infineon Technologies, Diode Silicon Carbide Schottky 650V 3A (DC) Through Hole PG-TO220-2-1, CoolSiC™	View
IDH06G65C5XKSA2	Infineon Technologies, Diode Silicon Carbide Schottky 650V 6A (DC) Through Hole PG-TO220-2-1, CoolSiC™	View