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IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2

Part NumberIAUT165N08S5N029ATMA2

ManufacturerInfineon Technologies

Description80V 165A 2.9MOHM TOLL

DatasheetIAUT165N08S5N029

Package / Case8-PowerSFN

Unit PriceRequest a Quote

Lead TimeTo be Confirmed

Detailed DescriptionN-Channel 80V 165A (Tc) 167W (Tc) Surface Mount PG-HSOF-8-1

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IAUT165N08S5N029ATMA2 - Product Attributes

Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	IAUT165N08S5N029
Standard Package	1
Manufacturer	Infineon Technologies
Series	OptiMOS™
Packaging	Cut Tape (CT)
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	165A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id	3.8V @ 108µA
Gate Charge (Qg) (Max) @ Vgs	90nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	6370pF @ 40V
FET Feature	-
Power Dissipation (Max)	167W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN

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IAUT165N08S5N029ATMA2 - Tags

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