RUS100N02TB
RUS100N02TB
Part Number RUS100N02TB Description MOSFET N-CH 20V 10A 8SOP Package / Case 8-SOIC (0.154", 3.90mm Width)Unit Price Request a QuoteLead Time To be ConfirmedDetailed Description N-Channel 20V 10A (Ta) 2W (Ta) Surface Mount 8-SOP
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RUS100N02TB - Product Attributes
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Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet RUS100N02 Standard Package 2500 Manufacturer Rohm Semiconductor Series - Packaging Tape & Reel (TR) Part Status Not For New Designs FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 10A (Ta) Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 12mOhm @ 10A, 4.5V Vgs(th) (Max) @ Id 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs 24nC @ 4.5V Vgs (Max) ±10V Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 10V FET Feature - Power Dissipation (Max) 2W (Ta) Operating Temperature 150°C (TJ) Mounting Type Surface Mount Supplier Device Package 8-SOP Package / Case 8-SOIC (0.154", 3.90mm Width)
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