RSD175N10TL

Part NumberRSD175N10TL

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Categories	Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single
Datasheet	RSD175N10
Standard Package	2500
Manufacturer	Rohm Semiconductor
Series	-
Packaging	Tape & Reel (TR)
Part Status	Not For New Designs
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	17.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Rds On (Max) @ Id, Vgs	105mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	24nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	950pF @ 25V
FET Feature	-
Power Dissipation (Max)	20W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	CPT3
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63

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